NVMdurance “Flash Memory Device and Control Method” patent granted in China

22 Jul 2020 Jodie Gilpin By Jodie Gilpin

NVMdurance “Flash Memory Device and Control Method” patent granted in China.

NVMdurance, with its unique approach to extending the endurance of flash devices, has announced that patent number ZL 20`0 8 0052625.2; NVMD-002CN developed by Joe Sullivan and Conor Ryan, both of Limerick, Ireland, has been granted in China for “A Flash Memory Device and Control Method. Read more here...